mmbz5225 to mmbz5267 document number 85772 rev. 1.3, 08-nov-04 vishay semiconductors www.vishay.com 1 18078 12 3 small signal zener diodes features ? silicon planar power zener diodes. standard zener voltage tolerance is 5 % with a "b" suffix, suffix ?c? is 2 % tolerance. high temperature soldering guaranteed: 250 c/10 seconds at terminals. these diodes are also available in minimelf case with the type designation zmm5225...zmm5267, sod-123 case with the type designation mmsz5225... mmsz5267. mechanical data case: sot-23 plastic case weight: approx. 8.8 mg packaging codes/options: gs18 / 10 k per 13 " reel (8 mm tape), 10 k/box gs08 / 3 k per 7 " reel (8 mm tape), 15 k/box absolute maximum ratings t amb = 25 c, unless otherwise specified 1) on fr - 5 board using recommended solder pad layout 2) on alumina substrate thermal characteristics t amb = 25 c, unless otherwise specified 1) on fr - 5 board using recommended solder pad layout parameter test condition symbol value unit zener current (see table "characteristics") power dissipation t a = 25 c p tot 225 1) mw p tot 300 2) mw parameter test condition symbol value unit thermal resistance junction to ambient air r thja 556 1) c/w maximum junction temperature t j 150 c storage temperature range t s -65 to + 175 c
www.vishay.com 2 document number 85772 rev. 1.3, 08-nov-04 mmbz5225 to mmbz5267 vishay semiconductors electrical characteristics t amb = 25 unless otherwise noted maximum v f = 0.9 v at i f = 10 ma 1) the zener impedance is derived from the 1 kh z ac voltage which results when an ac current having an rms value equal to 10 % of partnumber marking code nominal zener voltage te s t current maximum dynamic impedance 2) ty p i c a l te m p. of coefficient maximum reverse leakage current v z @ i zt1 i zt1 z zt @ i zt z zk @ i zk vz i r v r v ma ? ? %/c a v mmbz5225 18e 3 20 30 1600 -0.075 50 1 mmbz5226 8a 3.3 20 28 1600 -0.07 25 1 mmbz5227 8b 3.6 20 24 1700 -0.065 15 1 mmbz5228 8c 3.9 20 23 1900 -0.06 10 1 mmbz5229 8d 4.3 20 22 2000 -0.055 5 1 mmbz5230 8e 4.7 20 19 1900 0.030 5 2 mmbz5231 8f 5.1 20 17 1600 0.030 5 2 mmbz5232 8g 5.6 20 11 1600 0.038 5 3 mmbz5233 8h 6 20 7 1600 0.038 5 3.5 mmbz5234 8j 6.2 20 7 1000 0.045 5 4 mmbz5235 8k 6.8 20 5 750 0.05 3 5 mmbz5236 8l 7.5 20 6 500 0.058 3 6 mmbz5237 8m 8.2 20 8 500 0.062 3 6.5 mmbz5238 8n 8.7 20 8 600 0.065 3 6.5 mmbz5239 8p 9.1 20 10 600 0.068 3 7 mmbz5240 8q 10 20 17 600 0.075 3 8 mmbz5241 8r 11 20 22 600 0.076 2 8.4 mmbz5242 8s 12 20 30 600 0.077 1 9.1 mmbz5243 8t 13 9.5 13 600 0.079 0.5 9.9 mmbz5244 8u 14 9 15 600 0.082 0.1 10 mmbz5245 8v 15 8.5 16 600 0.082 0.1 11 mmbz5246 8w 16 7.8 17 600 0.083 0.1 12 mmbz5247 8x 17 7.4 19 600 0.084 0.1 13 mmbz5248 8y 18 7 21 600 0.085 0.1 14 mmbz5249 8z 19 6.6 23 600 0.086 0.1 14 mmbz5250 81a 20 6.2 25 600 0.086 0.1 15 mmbz5251 81b 22 5.6 29 600 0.087 0.1 17 mmbz5252 81c 24 5.2 33 600 0.087 0.1 18 mmbz5253 81d 25 5 35 600 0.089 0.1 19 mmbz5254 81e 27 4.6 41 600 0.090 0.1 21 mmbz5255 81f 28 4.5 44 600 0.091 0.1 21 mmbz5256 81g 30 4.2 49 600 0.091 0.1 23 mmbz5257 81h 33 3.8 58 700 0.092 0.1 25 mmbz5258 81j 36 3.4 70 700 0.093 0.1 27 mmbz5259 81k 39 3.2 80 800 0.094 0.1 30 mmbz5260 18f 43 3 93 900 0.095 0.1 33 mmbz5261 81m 47 2.7 105 1000 0.095 0.1 36 mmbz5262 81n 51 2.5 125 1100 0.096 0.1 39 mmbz5263 81p 56 2.2 150 1300 0.096 0.1 43 mmbz5264 81q 60 2.1 170 1400 0.097 0.1 46 mmbz5265 81r 62 2 185 1400 0.097 0.1 47 mmbz5266 81s 68 1.8 230 1600 0.097 0.1 52 mmbz5267 81t 75 1.7 270 1700 0.098 0.1 56
mmbz5225 to mmbz5267 document number 85772 rev. 1.3, 08-nov-04 vishay semiconductors www.vishay.com 3 the zener current (i zt or i zk ) is superimposed on i zt or i zk . zener impedance is measured at two points to insure a sharp knee on the breakdown curve and to eliminate unstable units. 2) valid provided case is k ept at ambient temperature. 3) measured at thermal equilibrium. typical characteris tics (tamb = 25 c unless otherwise specified) figure 1. forward characteristics figure 2. capacitance vs. zener voltage 18114 18118 3 4 18672 c 18116
www.vishay.com 4 document number 85772 rev. 1.3, 08-nov-04 mmbz5225 to mmbz5267 vishay semiconductors package dimensions in mm (inches) 2.0 (0.079) 0.9 (0.035) 0.95 (0.037) 0.95 (0.037) 0.52 (0.020) 1 2 3 17418 2.8 (.110) 3.1 (.122) 0.4 (.016) 0.95 (.037) 0.95 (.037) 0.1 (.004) max. 1.20(.047) 1.43 (.056) 0.4 (.016) 0.4 (.016) 0.098 (.005) 0.175 (.007) 0.95 (.037) 1.15 (.045) 2.35 (.092) 2.6 (.102) iso method e mounting pad layout
mmbz5225 to mmbz5267 document number 85772 rev. 1.3, 08-nov-04 vishay semiconductors www.vishay.com 5 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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